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NSR20F30NXT5G Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Features
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* * * * * * *
Very Low Forward Voltage Drop - 480 mV @ 2.0 A Low Reverse Current - 20 mA @ 10 V VR 2.0 A of Continuous Forward Current Power Dissipation of 665 mW with Minimum Trace ESD Rating - Human Body Model: Class 3B ESD Rating - Machine Model: Class C Very High Switching Speed These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc-dc Converters Reverse Voltage and Current Protection Clamping & Protection Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS
30 V SCHOTTKY BARRIER DIODE
1 CATHODE 2 ANODE
2
MARKING DIAGRAM
PIN 1 1 20F30 YYY
Typical Applications
* * * * * * * * * *
DSN2 (0603) CASE 152AB 20F30 YYY
= Specific Device Code = Year Code
Markets ORDERING INFORMATION
Device NSR20F30NXT5G Package Shipping
DSN2 5000 / Tape & Reel (Pb-Free)
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current (DC) Forward Surge Current ESD Rating: (60 Hz @ 1 cycle) Symbol VR IF IFSM ESD Value 30 2.0 28 >8 > 400 Unit V A A kV V
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Human Body Model Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
(c) Semiconductor Components Industries, LLC, 2010
July, 2010 - Rev. 2
1
Publication Order Number: NSR20F30/D
NSR20F30NXT5G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Storage Temperature Range Junction Temperature Symbol RqJA PD RqJA PD Tstg TJ Min Typ Max 213 586 80 1.56 -40 to +125 +150 Unit C/W mW C/W W C C
1. Mounted onto a 4 in square FR-4 board 50 mm sq. 1 oz. Cu 0.06" thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06" thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Reverse Leakage (VR = 10 V) (VR = 30 V) Forward Voltage (IF = 1.0 A) (IF = 2.0 A) Symbol IR Min Typ Max 20 150 0.42 0.48 Unit mA
VF
V
10 IF, FORWARD CURRENT (A) TJ = 125C TJ = 150C 0.1
100000 IR, REVERSE CURRENT (mA) 10000 1000 100 10 1 0.1 0.01 0.001 0 5 10
150C 125C 75C
1
25C
0.01 75C 0.1 25C 0.2 -25C 0.3 0.4 0.5
-25C
0.001 0.0
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
450 400 C, CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 5 10 15 20
Figure 2. Typical Reverse Current
TA = 25C
25
30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance http://onsemi.com
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NSR20F30NXT5G
PACKAGE DIMENSIONS
DSN2, 1.6x0.8, 0.9P, (0603) CASE 152AB-01 ISSUE A
0.05 C D AB E TOP VIEW 0.05 C A 0.05 C A1 SIDE VIEW C
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A A1 b D E L L2 L3 MILLIMETERS MIN MAX 0.25 0.31 --- 0.05 0.55 0.65 1.60 BSC 0.80 BSC 1.45 1.55 0.90 1.00 0.25 0.35
0.05 C
CATHODE BAND MONTH CODING
DEC NOV OCT
0.05 C A B L L/2 b
SEP JUN MAR FEB JAN
XXXX YYY XXXX Y09
INDICATES AUG 2009
DEVICE CODE YEAR CODE
1
0.05 C A B L2
L3 BOTTOM VIEW
(EXAMPLE)
MOUNTING FOOTPRINT*
1.70 0.52 PIN 1 0.70 1.05
DIMENSIONS: MILLIMETERS
0.80
See Application Note AND8398/D for more mounting details *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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3
NSR20F30/D

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